8.2: Invited Paper: Amorphous Metal Thin‐Film Transistors: High Mobility TFT Fabricated by An All PVD Process-Reference-Cited by-同舟云学术

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8.2: Invited Paper: Amorphous Metal Thin‐Film Transistors: High Mobility TFT Fabricated by An All PVD Process

Published:2021-02 Issue:S1 Volume:52 Page:58-58
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Kearney Dylan¹,Mendez Jose¹,Self Sarah¹,Anderson Jason¹,Muir Sean W.¹

Affiliation:

1. Amorphyx Inc. Corvallis OR USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14373

Reference3 articles.

1. ID Asks/Dongsheng Wang;Werner K.;Inf. Disp.,2019

2. How We Developed an Amorphous Hinge Material;Tregilgas J.;Adv. Mater. Processes,2005

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 25‐1: Invited Paper: Effect of Self‐Alignment on BGTC IGZO AMeTFTs;SID Symposium Digest of Technical Papers;2024-04

2. 43.2: Parasitic Capacitance Model for BGTC TFTs and Verification Using C‐V Measurements from Devices with Various Channel Dimensions;SID Symposium Digest of Technical Papers;2023-04

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