Nonlinear modeling of LDMOS transistors for high-power FM transmitters

Author:

Bosi Gianni1,Crupi Giovanni2,Vadalà Valeria1,Raffo Antonio1,Giovannelli Antonello3,Vannini Giorgio1

Affiliation:

1. University of Ferrara; Dipartimento di Ingegneria; via G. Saragat 1 44122 Ferrara Italy

2. University of Messina; DICIEAMA, Contrada di Dio; S. Agata 98166 Messina Italy

3. ELENOS s.r.l.; via G. Amendola 9, Poggio Renatico Ferrara Italy

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference21 articles.

1. LDMOS technology for RF power amplifiers;Theeuwen;IEEE T Microw Theory,2012

2. Bouny J-J A high efficiency 250W LDMOS amplifier for polar transmitter at 940MHz IEEE Microwave Symposium Digest 10.1109/mwsym.2011.5972631

3. Highly efficient LDMOS power amplifier based on class-E topology;Lee;Microw Photonic Tech L,2006

4. Envelope tracking power amplifier with static predistortion linearization;Rautio;Int J Circ Theor App,2009

5. Non-linear performance comparison for FD and PD SOI MOSFETs based on the integral function method and Volterra modeling;Parvais;Int J Numer Model El,2005

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