Thermally stable poly‐Si tunnel junctions enabling next‐generation high‐efficiency Si solar cells-Reference-Cited by-同舟云学术

Thermally stable poly‐Si tunnel junctions enabling next‐generation high‐efficiency Si solar cells

Published:2021-08-31 Issue:1 Volume:30 Page:85-95
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Ng Xin Ren¹²^ORCID,Lai Donny¹,Wang Puqun¹,Aberle Armin G.¹³,Stangl Rolf¹,Lin Fen¹^ORCID

Affiliation:

1. Solar Energy Research Institute of Singapore (SERIS) National University of Singapore Singapore

2. Department of Chemical and Biomolecular Engineering National University of Singapore Singapore

3. Department of Electrical and Computer Engineering National University of Singapore Singapore

Funder

Economic Development Board - Singapore

Energy Market Authority of Singapore

National Research Foundation Singapore

National University of Singapore

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3462

Reference45 articles.

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3. PeibstR.et al “Implementation of n+ and p+ poly junctions on front and rear side of double‐side contacted industrial silicon solar cells ” in32nd European Photovoltaic Solar Energy Conference and Exhibition 2016 pp.323‐327.

4. Semi-Insulating Polycrystalline-Silicon (SIPOS) Passivation Technology

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