Doped Graphene Quantum Dots Modified Zn0.9Cd0.1Se for Improved Photoelectric Properties

Abstract

AbstractS‐graphene quantum dots (GQDs), N‐GQDs, P‐GQDs, and Cl‐GQDs are prepared by a solution chemistry method and further incorporated with ZnxCd1−xSe by one‐step hydrothermal method. In the previous study, ZnxCd1−xSe reached the optimal photoelectric performances at the Zn/Cd ratio of 0.9:0.1, so the Zn0.9Cd0.1Se were combined with doped GQDs (D‐GQDs) to form Zn0.9Cd0.1Se/doped‐GQDs. The influence of GQDs doped with different elements on the photoelectric properties of Zn0.9Cd0.1Se composites is discussed. Compared with pristine Zn0.9Cd0.1Se, Zn0.9Cd0.1Se/Cl‐GQDs, and Zn0.9Cd0.1Se/P‐GQDs can improve the photocurrent response and current intensity, therein, Zn0.9Cd0.1Se/Cl‐GQDs reaches the lowest interfacial charge transfer resistance and the highest photocurrent response of 5.48 × 10−6 A cm−2. Mott–Schottky analysis shows that the fitting slope of Zn0.9Cd0.1Se/Cl‐GQDs composites is significantly lower than that of Zn0.9Cd0.1Se/GQDs with other doped elements. The results indicate that Zn0.9Cd0.1Se/Cl‐GQDs composites has the largest carrier density, which is beneficial to charge conduction.