ZnSSe Decorated Reduced Graphene Oxide for Enhanced Photoelectric Properties

Abstract

AbstractZSSG (ZnSSe/rGO) composites are prepared by a hydrothermal method. The structure, morphology and material properties are investigated by various tests. Compared to ZnSe, the diffraction peaks of ZnSSe are moved to a larger angle and located between cubic phase ZnSe and cubic phase ZnS. The photocurrent density of ZSSG20 with 20 wt.% graphene is 2.17×10−5 A cm−2, which is 8.9 times higher than that of pure ZnSSe. ZSSG20 has the minimum charge transfer resistance and highest carrier density. The decreased fluorescence intensity in PL spectra indicates that graphene can effectively prevent the recombination of electron‐hole pairs.