Influence of device dimension and gate recess on the characteristics of AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

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Influence of device dimension and gate recess on the characteristics of AlGaN/GaN high electron mobility transistors

Published:2012-06-18 Issue:9 Volume:54 Page:2103-2106
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Lee Jong-Min,Yoon Hyung-Sup,Min Byoung-Gue,Mun Jae-Kyoung,Nam Eunsoo

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Stability improvement of 60 GHz narrowband amplifier using microstrip coupled lines;Chang;ETRI J,2009

2. Fabrication of transimpedance amplifier module and post-amplifier module for 40 Gb/s optical communication systems;Lee;ETRI J.,2009

3. Influence of the source-gate distance on the AlGaN/GaN HEMT performance;Russo;IEEE Trans Electron Devices,2007

4. DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths;Lin;Solid-State Electron,2010

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and electrical properties of an AlGaN/GaN HEMT on SiC with a taper-shaped backside via hole;Journal of the Korean Physical Society;2015-08

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