ChemInform Abstract: The Growth Mechanism of Silicon Carbide Films by Chemical Vapor Deposition Below 1273 K
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Published:2010-08-23
Issue:2
Volume:22
Page:no-no
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ISSN:0931-7597
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Container-title:ChemInform
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language:en
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Short-container-title:ChemInform
Author:
TANAKA S.,KOMIYAMA H.