ChemInform Abstract: Silicon Dioxide with a Silicon Interfacial Layer as an Insulating Gate for Highly Stable Indium Phosphide Metal-Insulator-Semiconductor Field Effect Transistors
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Published:2010-08-22
Issue:34
Volume:22
Page:no-no
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ISSN:0931-7597
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Container-title:ChemInform
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language:en
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Short-container-title:ChemInform
Author:
SHOKRANI M.,KAPOOR V. J.