In Situ Growth of a Robust 1D Capping Layer for Stable and Efficient CsPbI3 Perovskite Solar Cells Without Hole Transporter

Author:

Wang Hailiang1,Song Yongfa1,Lin Zedong23,Li Weiping1,Liu Huicong1,Wei Xiaozhen1,Zhang Qixian1,Lv Chunyu1,Zhu Liqun1,Wang Kexiang4,Lan Yisha5,Wang Lan6,Lin Changqing7,Yin Penggang4,Song Tinglu5,Bai Yang5,Chen Qi5,Yang Shihe23,Chen Haining1ORCID

Affiliation:

1. School of Materials Science and Engineering Beihang University Beijing 100191 China

2. Guangdong Provincial Key Lab of Nano‐Micro Materials Research School of Advanced Materials Shenzhen Graduate School Peking University Shenzhen 518055 China

3. Institute of Biomedical Engineering Shenzhen Bay Laboratory Shenzhen 518107 China

4. School of Chemistry Beihang University Beijing 100191 China

5. Experimental Center of Advanced Materials School of Materials Science & Engineering Beijing Institute of Technology Beijing 100081 China

6. School of Internet of Things Engineering Jiangnan University Wuxi Jiangsu 214122 China

7. School of Physical Science and Technology Guangxi University Nanning 530004 China

Abstract

AbstractCsPbI3 perovskite is a promising light absorber in perovskite solar cells (PSCs) due to its suitable bandgap (Eg) and high chemical stability, but the perovskite phase is metastable in ambient atmosphere and prone to defect formation. To enhance phase stability and reduce defects, forming a low dimensional (LD) perovskite on CsPbI3 has proved effective. However, the energy levels for most of low‐conductivity LD perovskites are not very compatible with those of CsPbI3, which will impair charge separation and device performance. Herein, a new 1D perovskite (5‐Azaspiro[4.4]nonan‐5‐ium lead triiodide, ASNPbI3) with compatible energy levels and a large Eg is reported as a capping layer. The p‐type ASNPbI3 forms a p‐n heterojunction with n‐CsPbI3 with a staggered band alignment, considerably enhancing the carrier separation. Besides, by pre‐forming a ASNPbI3 at an intermediate stage, defects are suppressed in perovskite film. Consequently, the CsPbI3 PSCs based on carbon electrode without hole transporter (C‐PSCs) achieves a PCE of 18.34%, which is among the highest‐reported values for inorganic C‐PSCs. Furthermore, the hydrophobic ASNPbI3 capping layer has a high thermal stability that greatly enhances perovskite phase stability. Hence, the CsPbI3 C‐PSCs maintains 68% of its initial PCE after 400 h aging at 85°C in a N2 glovebox.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Publisher

Wiley

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