Affiliation:
1. Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 P. R. China
2. CNRS ISCR (Institut des Sciences Chimiques de Rennes) UMR 6226 Université de Rennes Rennes F‐35000 France
Abstract
AbstractCu2ZnSn(S,Se)4 (CZTSSe) is a promising light absorbing semiconductor for solar energy conversion in photovoltaic cells and photo‐electrochemical (PEC) water‐splitting devices, owing to its earth‐abundant constituents, adjustable band‐gap, and superior absorption coefficient. However, the severe charge carrier recombination and the sluggish charge separation efficiency are the main issues obstructing the enhancement of device performance. In this work, a planar‐type Mo/CZTSSe/CdS/TiO2/Pt photocathode is fabricated. High‐quality CZTSSe film with compact and uniform crystal grains can be obtained via a two‐step process involving solution processed spin coating and thermally processed selenization. When an appropriate film thickness is used, both bulk defects and surface/interface defects are passivated, significantly suppressing the defects‐assisted recombination. Moreover, the benign energy band alignment of CZTSSe/CdS heterojunction is favorable to enhance photo‐generated charge separation and transfer efficiency. A remarkable photocurrent density of 40.40 mA cm−2 (at 0 VRHE) can be achieved, approaching to its theoretical value of 42.85 mA cm−2, and representing the highest value reported to date for kesterites‐based photocathodes. A champion CZTSSe photocathode with half‐cell solar‐to‐hydrogen conversion efficiency of 6.47% suggests a bright future for efficient solar hydrogen production applications.
Funder
National Natural Science Foundation of China
Subject
General Materials Science,Renewable Energy, Sustainability and the Environment
Cited by
23 articles.
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