Ultrasonic Investigation of the Acceptor Ground State of Si(B) II. The Distribution of Splittings
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. ESR From boron in silicon at zero and small external stress I. Line positions and line structure
2. ESR from boron in silicon at zero and small external stress. II. Linewidth and crystal defects
3. Ultrasonic attenuation due to the neutral acceptor Mn in GaAs
4. Spin and combined resonance on acceptor centres in Ge and Si type crystals—I
5. Paramagnetic relaxation of shallow acceptor states in semiconductors
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1. Nonlocal host isotope effect in silicon: High-resolution spectroscopy of the 29 cm−1oxygen vibrational line;Physical Review B;2012-08-06
2. Isotope effect on electron paramagnetic resonance of boron acceptors in silicon;Physical Review B;2010-09-27
3. Origin of the Residual Acceptor Ground-State Splitting in Silicon;Physical Review Letters;2003-01-10
4. Photoluminescence studies of isotopically enriched silicon;physica status solidi (b);2003-01
5. “Intrinsic” Acceptor Ground State Splitting in Silicon: An Isotopic Effect;Physical Review Letters;2002-06-12
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