Screening of the Coulomb Potential in the Athermal Stage of Highly Excited Direct-Gap Semiconductors-Reference-Cited by-同舟云学术

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Screening of the Coulomb Potential in the Athermal Stage of Highly Excited Direct-Gap Semiconductors

Published:1990-05-01 Issue:1 Volume:159 Page:43-48
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Heiner E.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Evolution Equations for Highly Excited Direct Semiconductors in the Athermal Stage

2. and , Resonantsnoe vsaimodeistvie elektromagnitnykh polei s poluprovodnikami, Energoatomizdat, Moskva 1986 (p. 13).

3. Dissipation in many-body systems: A geometric approach based on information theory

4. Equations of Motion in Nonequilibrium Statistical Mechanics

5. Evolution Equations for Highly Excited Direct Semiconductors in the Athermal Stage- Entropy and Entropy Production

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solutions of optical Bloch equations for highly excited direct gap semiconductors in a time-dependent mean-field approach;Physica Scripta;1992-07-01

2. The time dependent projection operator method for tunneling in Josephson junctions;Zeitschrift f�r Physik B Condensed Matter;1992-06

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