A Non-Dangling Bond Model of Paramagnetic Defects in Ge-S Glasses-Reference-Cited by-同舟云学术

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A Non-Dangling Bond Model of Paramagnetic Defects in Ge-S Glasses

Published:1995-11-01 Issue:1 Volume:192 Page:181-192
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Černošek Z.,Černošková E.,Frumar M.,Swiatek K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. ESR in GeS glasses

2. Effect of Impurities on ESR Spectrum in Ge-S Glass

3. ESR study of amorphous Ge-S and Ge-S-Ag in bulk and film forms

4. On the Property and Origin of Paramagnetic Defects in Amorphous Ge–S and Ge–S–Ag

5. Effective Electron Correlation Energy in Amorphous Ge–S

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1. Chalcogenide Ovonic Threshold Switching Selector;Nano-Micro Letters;2024-01-11

2. Kinetic study of UV-irradiated amorphous sulfur by EPR spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-04

3. Paramagnetic defects in solid sulphur and glasses of the system Ge–S;Journal of Non-Crystalline Solids;2001-10

4. The effect of compositional variations on the properties of rare-earth doped GeSI chalcohalide glasses;Journal of Non-Crystalline Solids;1997-12

5. Photoinduced anisotropy in Pr-doped GeSI glasses with varying composition and Pr content;Journal of Non-Crystalline Solids;1997-12

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