Impact Ionisation Theory for Traps in Semiconductors
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. On the Physics of Avalanche Breakdown in Semiconductors
2. Effect of Compensation on Breakdown Fields in Homogeneous Semiconductors
3. Magnetic Freezeout and Impact Ionization in GaAs
4. Field dependence of the capture and re-emission of charge carriers by shallow levels in germanium and silicon
5. On detailed balance between Auger recombination and impact ionization in semiconductors
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A lifetime in Auger transitions;Journal of Physics and Chemistry of Solids;1988-01
2. Multiphonon broadening of impact ionisation and Auger recombination involving traps in semiconductors;Journal of Physics C: Solid State Physics;1983-07-10
3. Impact ionisation and Auger recombination involving traps in semiconductors;Journal of Physics C: Solid State Physics;1980-04-30
4. Auger Recombination with Traps;physica status solidi (b);1980-02-01
5. Aspects of the Theory of Impact Ionization in Semiconductors (I);physica status solidi (b);1980-01-01
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