High Field Transport in n-InSb at 77 °K and the Solution of Boltzmann's Equation by Iteration-Reference-Cited by-同舟云学术

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High Field Transport in n-InSb at 77 °K and the Solution of Boltzmann's Equation by Iteration

Published:1973-08-01 Issue:2 Volume:58 Page:493-499
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Stokoe T. Y.,Cornwell J. F.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Calculation of distribution functions by exploiting the stability of the steady state

2. Numerical solution of electron motion in solids

3. High-Field Transport: Collision Integrals for Small Band Gap Semiconductors

4. High field transport in semiconductors. The drifted Maxwellian approach. I. general theory

5. High field transport in semiconductors. The drifted maxwellian approach. II. Application to n-Insb

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Iterative spectral solution of the Poisson‐Boltzmann equation in semiconductor devices;Journal of Applied Physics;1994-12-15

2. Carrier distribution function in semiconductors;Solid-State Electronics;1978-01

3. Low‐temperature electron mobility in InSb;Journal of Applied Physics;1977-08

4. Dynamical Response of Electrons in GaAs at 300 K;Physica Status Solidi (b);1977-05-01

5. Drift velocity oscillations in n-GaAs at 77 K;Physica Status Solidi (a);1975-09-16

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