Pressure Dependence of the Band Structure of GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Band Structure and Effective Masses for GaAs from a Combined Pseudopotential -k.p Calculation
2. Elastic Moduli of GaAs at Moderate Pressures and the Evaluation of Compression to 250 kbar
3. Band Structure and Pseudopotential Form Factors for AlAs
4. Interband Piezo-Absorption Measurements in GaAs
5. Electrical Properties of the GaAsX1CMinima at Low Electric Fields from a High-Pressure Experiment
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1. Pressure dependence of band gaps in GaAs, GaP, InP, and InAs;Materials Chemistry and Physics;1994-07
2. The alloying and pressure dependence of band gaps in GaAs and GaAsxP1−x;Computational Materials Science;1994-03
3. Correlation between high pressure effect and alloying in GaAs and Ga1-xAlx As;Computational Materials Science;1993-10
4. Relativistic analogies in direct-gap semiconductors;Progress in Quantum Electronics;1993-01
5. Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structures;Physical Review B;1987-01
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