On the Excess Charge Value on the Bond Line in Diamond, Silicon, and Germanium-Reference-Cited by-同舟云学术

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On the Excess Charge Value on the Bond Line in Diamond, Silicon, and Germanium

Published:1992-08-01 Issue:2 Volume:172 Page:K51-K53
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Gamarnik M. Ya.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Extrinsic Photoconductivity in Ge Caused by Dislocations

2. Absolute Measurement of Structure Factors of Si Single Crystal by Means of X-Ray Pendellösung Fringes

3. , , , , , , and , Modern Crystallography, Vol. 4, Physical Properties of Crystals, Izd. Nauka, Moskva 1981 (p. 495) (in Russian).

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Size-related stabilization of diamond nanoparticles;Nanostructured Materials;1996-08

2. Energetical preference of diamond nanoparticles;Physical Review B;1996-07-15

3. Epitaxial growth mechanisms and structure ofCaF2/Si(111);Physical Review B;1994-11-15

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