Local Vibrational Mode Absorption of Hydrogen and Oxygen Centres in LEC-Grown GaP and GaAs-Reference-Cited by-同舟云学术

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Local Vibrational Mode Absorption of Hydrogen and Oxygen Centres in LEC-Grown GaP and GaAs

Published:1987-10-01 Issue:2 Volume:143 Page:K135-K139
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Ulrici B.,Stedman R.,Ulricix W.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Infrared spectroscopic evidence of silicon related hydrogen complexes in hydrogenatedn‐type GaAs doped with silicon

2. Evidence for complexes of hydrogen with deep-level defects in bulk III-V materials

3. in: Deep Centres in Semiconductors, Ed. Gordon and Breach, New York 1986.

4. Localized vibrational modes of interstitial oxygen and oxygen complexes in GaP

5. Localized vibrations of hydrogen and deuterium in GaAs. A comparison with Ge and Si

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vibrational Absorption of Substitutional Atoms and Related Centres;Springer Series in Solid-State Sciences;2011-10-27

2. Nitrogen-related defects in GaP and GaAs;Physica B: Condensed Matter;2006-04

3. Hydrogen-impurity complexes in III–V semiconductors;Reports on Progress in Physics;2004-11-03

4. Hydrogen passivation of the SiGa donor in GaP;physica status solidi (b);2003-01

5. Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz);Progress in Crystal Growth and Characterization of Materials;2001-01

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