Filling-Factor-Dependent Cyclotron Resonance in GaInAs/AlInAs Modulation-Doped Single Quantum Wells
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Theory of Cyclotron Resonance Lineshape in a Two-Dimensional Electron System
2. Cyclotron resonance of electrons in surface space-charge layers on silicon
3. Cyclotron resonance of high-mobility two-dimensional electrons at extremely low densities
4. Cyclotron-resonance oscillations in InAs quantum wells
5. Filling factor dependent Landau level broadening studied with inter- and intraband magneto-optics in GaInAs/AlInAs MDQWs
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1. Quantum oscillation of the cyclotron mass in two-dimensional electron systems in silicon;Physical Review B;1996-07-15
2. Spectroscopic studies of the effects of two‐dimensional electron gas on interband transitions;Journal of Applied Physics;1995-05
3. 4.2.5 References for 4.1 and 4.2;Landolt-Börnstein - Group III Condensed Matter
4. 4.2.4 Other well materials;Landolt-Börnstein - Group III Condensed Matter
5. 4.2.3 InAs and In{1-y}Ga{y}As wells;Landolt-Börnstein - Group III Condensed Matter
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