Comments on the theory of photoionization of transition metal impurities in semiconductors-Reference-Cited by-同舟云学术

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Comments on the theory of photoionization of transition metal impurities in semiconductors

Published:1971-10-01 Issue:2 Volume:47 Page:443-449
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Langer J. M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Photo-ionization of deep impurities in semiconductors

2. Optical properties of transition metal impurities in CdSe. I. Crystal-field spectra

3. and , Phys. stat. sol. (b), to be published.

4. and , Proc. II-VI Compounds Seminar, Jaszowiec, IET Rep., Polish Acad. Sci., Warsaw 1971.

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1. Photoacoustic spectroscopy of diluted magnetic semiconductors;Journal of Applied Physics;1996-12-15

2. Fe-based semimagnetic semiconductors with two anions;Physical Review B;1996-04-15

3. The Iron States in Cd1−xFexTe in the Fundamental Gap Energy Range;physica status solidi (b);1995-06-01

4. Optical absorption of GaP:Fe crystals irradiated with high-energy electrons;Journal of Applied Spectroscopy;1992-05

5. Identification of the Ti donor level in GaP;Semiconductor Science and Technology;1991-02-01

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