Impurity Absorption in GaP Doped with Copper and Oxygen-Reference-Cited by-同舟云学术

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Impurity Absorption in GaP Doped with Copper and Oxygen

Published:1971-07-01 Issue:1 Volume:46 Page:299-309
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Olsson R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Electrical and Optical Properties of High-Resistivity Gallium Phosphide

2. Some properties of copper-doped gallium phosphide

3. and , to be published.

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical properties of the Cu-related characteristic-orange-luminescence center in GaP;Physical Review B;1982-06-15

2. Optical characterization of deep energy levels in semiconductors;Progress in Crystal Growth and Characterization;1982-01

3. Properties of deep Cu levels in GaP;Solid-State Electronics;1978-11

4. Optical transitions via the deep O donor in GaP. I. Phonon interaction in low-temperature spectra;Physical Review B;1978-07-15

5. Thermal‐ and optical‐excitation processes in GaP : Cu;Journal of Applied Physics;1978-06

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