Optical absorption by an exciton bound to an ionized donor impurity in anisotropic semiconductors
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Generation of the Exciton-Impurity Complex by Fast Electrons
2. Properties of Excitons Bound to Ionized Donors
3. Generation of Free Excitons and Exciton—Impurity Complexes by Fast Electrons in Extremely Anisotropic Crystals
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Variational calculations of ionized-donor-bound excitons in GaAs-Al x Ga 1 - x As quantum wells;The European Physical Journal B;2001-01
2. Exciton bound to an ionized donor impurity in semiconductor spherical quantum dots;Physical Review B;1996-12-15
3. Giant oscillator strengths of ionized donor bound excitons in semiconductor quantum crystallites;Solid State Communications;1996-10
4. Existence of an exciton bound to an ionized donor impurity in semiconductor quantum crystallites;Solid State Communications;1994-06
5. Binding energy of ionized-donor-bound excitons in two-dimensional semiconductors;Physical Review B;1989-03-15
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