ps-Laser Induced Transmission and Absorption in GaInAsP Epitaxial Layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Photoexcited carrier lifetime and Auger recombination in 1.3‐μm InGaAsP
2. Nonlinear carrier dynamics in GaxIn1−xAsyP1−ycompounds
3. Temperature dependence of carrier lifetime and Auger recombination in 1.3 μm InGaAsP
4. Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs
5. Band structure of indium antimonide
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fast Recombination of Excess Carrier in 6H-SiC;MRS Proceedings;1994
2. Picosecond carrier dynamics in highly excited InGaAs/InP/InGaAsP/InP structures;Semiconductor Science and Technology;1992-11-01
3. Influence of Hydrogenation of Defects at the Microcrystallite-Glass Interface on the Nonlinear Optics of CdSe Microcrystallites;physica status solidi (b);1990-07-01
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