Composition Dependence of the Band Gap of CuGaxIn1–xSe2 Solid Solutions
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Solid solution formation in the systems CuMIIIX2-AgMIIIX2 where MIII=Al, Ga, In and X2=S, Se
2. Optical properties of Culn1−xGaxSe2 mixed crystals
3. Crystal growth and properties of CuGaxIn1−xSe2 chalcopyrite compound
4. and , Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications, Pergamon Press, Oxford 1975.
5. Composition Dependence of the Band Gap of CuInS2xSe2(1−x)
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3. Nonlinearity, optoelectronic properties, and their correlations for some mixed ternary defect chalcopyrites;Quantum Electronics;2010-12-09
4. Electronic modification of Cu-based chalcopyrite semiconductors induced by lattice deformation and composition alchemy;Semiconductor Science and Technology;2007-12-19
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