The Temperature Dependence of the Energy Gap in Cd0.22Hg0.78Te. (I). Optical Measurement
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. in: Semiconductors and Semimetals, Ed. and , Vol. 16, Academic Press, New York 1981 (p. 119).
2. Temperature and composition dependence of the energy gap of Hg1−xCdxTe by two‐photon magnetoabsorption techniques
3. Landau Levels and Phonon Oscillations in Photovoltage Response of Cdx Hg1−x Te Diodes
4. Optical absorption below the absorption edge in Hg1−xCdxTe
5. Band‐to‐band optical absorption in narrow‐gap Hg1−xCdxTe semiconductors
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1. Galvanomagnetic and thermoelectric properties of p-Hg1-xCdxTe (xapprox. 0.22);Semiconductor Science and Technology;2000-12-14
2. Transport properties of p-Hg<formula><inf><roman>1-x</roman></inf></formula>Cd<formula><inf><roman>x</roman></inf></formula>Te (x = 0.22);SPIE Proceedings;1999-11-04
3. Magneto-conductance spectroscopy of a narrow-gap MIS device;Semiconductor Science and Technology;1996-11-01
4. Interface trap conductance spectroscopy of a narrow-gap Hg1-xCdxTe (x approximately=0.2) MIS device;Semiconductor Science and Technology;1995-08-01
5. The Temperature Dependence of the Energy Gap in Cd0.22, Hg0.78Te. II. Hall Effect Measurements;physica status solidi (b);1993-10-01
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