An Investigation of the Electronic Structure of GaSe and GaTe by Photoelectron Spectroscopy, Using a Synchrotron Source, and Electron Energy Loss Spectroscopy-Reference-Cited by-同舟云学术

An Investigation of the Electronic Structure of GaSe and GaTe by Photoelectron Spectroscopy, Using a Synchrotron Source, and Electron Energy Loss Spectroscopy

Published:1976-01-01 Issue:1 Volume:73 Page:307-316
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Williams R. H.,McGovern I. T.,Murray R. B.,Howells M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Proc. XII. Internat. Conf. Phys. Semicond., Stuttgart 1974 (p. 611).

2. Optical Properties and Collective Excitations in GaSe in the 2 to 80 eV Range

3. Electronic Excitations (3 to 35 eV Range) in Some Layered III–VI Compounds: GaS, GaSe, and InSe

4. Electron Emission Studies from GaSe Surfaces

5. Valence band structures and core-electron energy levels in the monochalcogenides of gallium. Photoelectron spectroscopic study

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