Luminescent analysis of an impurity in the near-surface layer of thermally evaporated silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Heteroepitaxy of germanium thin films on silicon by ion sputtering
2. p Layers on Vacuum Heated Silicon
3. P-type surface layers on n-type silicon heat-cleaned in UHV
4. p–n junctions in the surface region of silicon obtained by evaporation of silicon in ultrahigh vacuum
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The measurement of surface boron on silicon wafers annealed in vacuum and gas ambients;Thin Solid Films;1989-12
2. Using a hydrogen ambient to eliminate interfacial boron spikes in reduced temperature silicon epitaxy;Applied Physics Letters;1989-09-18
3. reconstruction along the (111) face of highly boron-doped Si upon vacuum annealing;Surface Science;1989-04
4. THE MEASUREMENT OF SURFACE BORON ON SILICON WAFERS ANNEALED IN VACUUM AND GAS AMBIENTS;Silicon Molecular Beam Epitaxy;1989
5. Angular resolved surface‐plasmon loss from Si(111) surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1988-05
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