Defect‐Induced Optical Absorption near the Electronic Band Edge of Tellurium
Author:
Affiliation:
1. I. Physikalisches Institut der Rheinisch‐ Westfälischen Technischen Hochschule Aachen
2. Université des Sciences et Techniques de Lille, Villeneuve d'Ascq
Funder
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.2220550223
Reference21 articles.
1. Influence of sample preparation on the interband absorption of holes in tellurium single crystals
2. Cyclotron resonance and relaxation time in tellurium at 890 GHz
3. J.Crampon Thbe de 3iéme Cycle de l'Université de Lille 1972; to be published.
4. Elastic limit and peierls forces in tellurium single crystals
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1. Relationship of the second order nonlinear optical coefficient to energy gap in inorganic non-centrosymmetric crystals;Infrared Physics & Technology;1997-06
2. Thermoelastic and electronic properties of quasi-one-dimensional defects in tellurium;Journal of Physics: Condensed Matter;1991-01-21
3. Recovery behavior of tellurium irradiated with 20-MeV electrons and the influence of lattice defects on the transport properties;Physical Review B;1981-08-15
4. Influence of Dislocations on the Cyclotron Resonance Absorption in Tellurium;Physica Status Solidi (b);1979-06-01
5. Dislocations in Te Influence on Galvanomagnetic Properties;Springer Series in Solid-State Sciences;1979
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