About an Increase of Exciton Binding Energy in Layered InSe
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Two-dimensional behaviour due to electrons bound at defects in InSe
2. The electric sub-band structure of electron accumulation layers in InSe from Shubnikov-de Haas oscillations and inter-sub-band resonance
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1. Structural and optical characterization of single-phase γ-In2Se3 films with room-temperature photoluminescence;Journal of Alloys and Compounds;2010-06
2. Investigation of the Light Absorption Mechanisms near Exciton Resonance in Layered Crystals;physica status solidi (b);2000-05
3. Investigation of the Light Absorption Mechanisms near Exciton Resonance in Layered Crystals;physica status solidi (b);1999-05
4. Indium selenide (InSe) direct exciton data;Non-Tetrahedrally Bonded Elements and Binary Compounds I
5. Indium selenide (InSe) indirect exciton data;Non-Tetrahedrally Bonded Elements and Binary Compounds I
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