Infrared Studies of Reactively Sputtered SiOx Films in the Composition Range 0.2 ≦ x ≦ 1.9
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Chemical bond and related properties of SiO2. VII. Structure and electronic properties of the SiOx region of Si–SiO2 interfaces
2. Zur Kenntnis der SiO- und Si 2 O 3 -Phase in Dünnen Schichten
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