Free carrier absorption in In1-xGaxAs-Reference-Cited by-同舟云学术

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Free carrier absorption in In1-xGaxAs

Published:1987-03-01 Issue:1 Volume:140 Page:K83-K86
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Aliev M. I.,Khalilov Kh. A.,Ibragimov G. B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Theory of the Free-Carrier Absorption in Zincblende Narrow-Gap Semiconductors

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1. Thin Film In0.53Ga0.47As Schottky Diodes for 28.3-THz Detection;IEEE Transactions on Electron Devices;2017-11

2. Infrared detection from GaInAs/InP nanopillar arrays;Nanotechnology;2005-07-18

3. Alloy-disorder-scattering-limited mobility of electrons in cylindrical quantum well wires;physica status solidi (b);2003-03

4. Alloy scattering in quantum well wire structures of semiconductor ternaries;Semiconductor Physics, Quantum Electronics and Optoelectronics;2002-12-17

5. Free-carrier absorption in semiconducting quantum well wires for alloy-disorder scattering;Journal of Physics: Condensed Matter;2002-08-22

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