Field Tunneling from Impurities in Case of Anisotropic Effective Masses-Reference-Cited by-同舟云学术

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Field Tunneling from Impurities in Case of Anisotropic Effective Masses

Published:1984-09-01 Issue:1 Volume:125 Page:K71-K73
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Dargys A.,Matulis A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Field Ionization of Phosphorus Atoms in Silicon

2. Wave Functions for Impurity Levels

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Field Ionization of Shallow Donors in Germanium;physica status solidi (b);1992-10-01

2. Tunnel ionization of donors in pure germanium;Physics Letters A;1991-08

3. Transient tunneling spectroscopy (TTS) study of electron tunneling from phosphorus atoms in silicon;Applied Physics A;1991-01

4. Impurity-band tunnelling anisotropy in n-Si;Semiconductor Science and Technology;1990-08-01

5. Electron tunneling from donors and excitons;Solid-State Electronics;1988-03

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