Cluster-Bethe-Lattice Approach to the Electronic Density of States of III-V Semiconductors: Application to GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Ab Initio Based Configuration Interaction Calculations on the Low-Lying Electronic States of GaAs;The Journal of Physical Chemistry A;1998-11-01
2. Mixed silicon carbide clusters studied by laser ablation Fourier transform ICR mass spectrometry;Organic Mass Spectrometry;1993-08
3. Spectroscopy and electronic structure of jet‐cooled GaAs;The Journal of Chemical Physics;1990-01
4. Abundance distribution of cluster ions in the laser mass spectra of the pure elements C, Si, Ge, Sn and of binary cluster ions from their mixtures;International Journal of Mass Spectrometry and Ion Processes;1989-08
5. Photodetachment and photofragmentation studies of semiconductor cluster anions;The Journal of Chemical Physics;1986-12-15
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