Determination of the Indirect Exciton Energy Gap of GaP Using Thermomodulation in the Temperature Range 80 to 350 K-Reference-Cited by-同舟云学术

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Determination of the Indirect Exciton Energy Gap of GaP Using Thermomodulation in the Temperature Range 80 to 350 K

Published:1990-06-01 Issue:2 Volume:159 Page:765-770
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Beckmann A.,Dettmer K.,Kessler F. R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Modulation Spectroscopy, Solid State Phys., Suppl. 11, Academic Press, 1969.

2. Temperature dependence of the direct gap of Si and Ge

3. Optical functions of silicon between 1.7 and 4.7 eV at elevated temperatures

4. Temperature dependence of band gaps in Si and Ge

5. Temperature dependence of the dielectric function and interband critical points in silicon

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