Pressure and Time-Resolved Photoluminescence Studies of Mg-Doped and Undoped GaN-Reference-Cited by-同舟云学术

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Pressure and Time-Resolved Photoluminescence Studies of Mg-Doped and Undoped GaN

Published:1996-11-01 Issue:1 Volume:198 Page:235-241
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Teisseyre H.,Kozankiewicz B.,Leszczynski M.,Grzegory I.,Suski T.,Bockowski M.,Porowski S.,Pakula K.,Mensz P. M.,Bhat I. B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Emerging gallium nitride based devices

2. (Ed.), Properties of Group III Nitrides, INSPEC, London 1994.

3. Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

4. Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

5. , and , in: High Pressure Chemical Synthesis, Ed. and , Elsevier, Publ. Co., Amsterdam 1989 (p. 21).

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1. Other Miscellaneous Semiconductors and Related Binary, Ternary, and Quaternary Compounds;Semiconductors;2019

2. Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN;Physical Review B;2018-05-17

3. Pressure dependence of energy gap of III–V and II–VI ternary semiconductors;Journal of Materials Science;2012-04-19

4. Electronic properties of GaN at high-pressure from local density and generalized gradient approximations;Computational Materials Science;2006-10

5. Luminescence properties of defects in GaN;Journal of Applied Physics;2005-03-15

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