Electronic band structure of pseudodirect chalcopyrite semiconductors: II. ZnGeP2 and ZnSiAs2-Reference-Cited by-同舟云学术

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Electronic band structure of pseudodirect chalcopyrite semiconductors: II. ZnGeP2 and ZnSiAs2

Published:1981-09-01 Issue:1 Volume:107 Page:319-333
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Heinrich A.,Cordts W.,Monecke J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. and , Ternary Chalcopyrite Semiconductors. - Growth, Electronic Properties and Applications, Pergamon Press, Oxford 1975.

2. and , Poluprovodniki AIIBIVCv2, Sovetskoe radio, Moskva, 1974.

3. The Lowest Conduction Band Minima of A2B4C25-Type Semiconductors

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1. Birefringence of optically uni-axial ternary semiconductors;Solid State Communications;2011-11

2. Electronic Structure of Triple Phosphides MgSiP2, ZnSiP2, and CdSiP2;Russian Physics Journal;2005-01

3. Chemical and biological sensors based on optically confined birefringent chalcopyrite heterostructures;Materials Science and Engineering: B;2003-01

4. Electronic structure ofZnGeP2:A detailed study of the band structure near the fundamental gap and its associated parameters;Physical Review B;1999-09-15

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