Enhancement of the Capture Rate of Excess Carriers Due to Acousto-Electric Amplification-Reference-Cited by-同舟云学术

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Enhancement of the Capture Rate of Excess Carriers Due to Acousto-Electric Amplification

Published:1972-11-01 Issue:1 Volume:54 Page:159-164
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:en
Short-container-title:Phys. Stat. Sol. (b)

Author:

Nimtz G.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Physica Acoustics, Vol. IV A, Ed. Academic Press, London/New York 1966.

2. , , and , Proc. Internat Conf. Light Scattering Spectra Solids, New York 1968.

3. , and , ESSDERC, F. 3. 5, Lancaster/U.K. 1972.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Acoustoelectric domain induced transparency in tellurium at 11 μm;Applied Optics;1977-11-01

2. Recombination in Tellurium at High Optical Excitation;Physica Status Solidi (b);1977-07-01

3. Microwave breakdown in tellurium;Physica Status Solidi (a);1977-05-16

4. On the impact ionization in tellurium;Physica Status Solidi (a);1973-10-16

5. Behaviour of the charge carriers in a random force field and some problems of the electronic theory of disordered semiconductors;La Rivista del Nuovo Cimento;1973-10

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