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Laser Induced Defects in GaAs Layers

  • Published:1985-08-01 Issue:2 Volume:130 Page:539-546
  • ISSN:0370-1972
  • Container-title:physica status solidi (b)
  • language:de
  • Short-container-title:phys. stat. sol. (b)

Author:

Wesch W.,Wendler E.,Götz G.,Unger K.,Röppischer H.,Resagk Chr.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. , , and , AIP Conf. Ser. No. 50, 67 (1979).

2. Laser annealing of ainc implanted GaAs

3. , and , in: Laser and Electron-Beam Solid Interactions and Materials Processing, Elsevier/North-Holland Publ. Co., 1981 (p. 231).

4. in: Laser Processing of Semiconductors, Ed. and , Academic Press, New York 1982 (p. 383).

5. , , and , see [3] (p. 223).

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2. Damage evolution in crystalline InP during irradiation with swift Xe ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-04

3. Damage formation in InP due to high electronic excitation by swift heavy ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-12

4. Formation of discontinuous tracks in single-crystalline InP by 250-MeV Xe-ion irradiation;Physical Review B;1998-08-15

5. Cross‐sectional high resolution electron microscopy of Zn+ implanted and low‐power pulsed‐laser annealed GaAs;Applied Physics Letters;1996-12-23
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