LCAO Recursion Approach for the Bound Electron States at the 90°-Partial Dislocation in Silicon-Reference-Cited by-同舟云学术

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LCAO Recursion Approach for the Bound Electron States at the 90°-Partial Dislocation in Silicon

Published:1989-08-01 Issue:2 Volume:154 Page:649-659
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Wang Yong-Liang,Teichler H.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. and , in: Dislocations in Solids, Vol. 5, Ed. North-Holland Publ. Co., Amsterdam 1980 (p. 128).

2. in: Dislocations in Solids, Vol. 7, Ed. North-Holland Publ. Co., Amsterdam 1986 (p. 118).

3. Electron states associated with partial dislocations in silicon

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dislocations;Materials Science and Technology;2013-02-15

2. Dislocation Networks Formed by Silicon Wafer Direct Bonding;Materials Science Forum;2008-08

3. Interaction of Point Defects with Dislocations in Silicon and Germanium: Electrical and Optical Effects;Solid State Phenomena;2001-12

4. Effects of Dislocation Interactions: Application to the Period-Doubled Core of the 90° Partial in Silicon;Physical Review Letters;1998-06-22

5. Electron States of a Vacancy in the Core of the 90° Partial Dislocation in Silicon;physica status solidi (b);1995-06-01

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