Capture of carriers into a GaAs/AlGaAs quantum well relevance to laser performance
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
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1. Signature of linear-in- k Dresselhaus splitting in the spin relaxation of X -valley electrons in indirect band gap AlGaAs;Physical Review B;2021-09-09
2. Effect of (Al)GaAs/AlGaAs quantum confinement region parameters on the threshold current density of laser diodes;Quantum Electronics;2019-06-01
3. Quantum Capture of Injected Electrons in GaN-Based Laser Heterostructures;physica status solidi (a);1999-11
4. Carrier Transport in Semiconductor Nanostructures;Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures;1999
5. Four-wave mixing mediated by the capture of electrons and holes in semiconductor quantum-well laser amplifiers;Applied Physics Letters;1997-12-22
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