Defect Formation in LiF by Low Energy Ion Implantation-Reference-Cited by-同舟云学术

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Defect Formation in LiF by Low Energy Ion Implantation

Published:1985-09-01 Issue:1 Volume:131 Page:87-96
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Afonso C. N.,Ortiz C.,Clark G. J.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. and , Colour Centers in Solids, Pergamon Press, 1962.

2. F Centers in Alkali Halides, Academic Press, (Inc.), 1966.

3. and , Colour Centres and Imperfections in Insulators and Semiconductors, Sussex University Press 1973.

4. Creation of lattice defects by electronic excitation in alkali halides

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterisation of defects in LiF implanted with Ar+ using variable energy positron beam;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05

2. The origin of optical absorption at 414 nm in the F2region of ion-implanted LiF crystals;Radiation Effects and Defects in Solids;2001-11

3. Characterisation of Al+-implanted LiF by a monoenergetic positron beam;Applied Surface Science;1999-08

4. Colour centres, dislocations and colloids in ion-implanted LiF and LiF(Mg);Journal of Physics: Condensed Matter;1995-04-24

5. Specific Features of the Defect Formation in LiF Crystals as a Result of Implantation of Li+ and F+ Ions;physica status solidi (b);1993-07-01

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