On Electron Emission from Quantum Wells in Ultrathin Films of Wide-Gap Semiconductors in Crossed Fields-Reference-Cited by-同舟云学术

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On Electron Emission from Quantum Wells in Ultrathin Films of Wide-Gap Semiconductors in Crossed Fields

Published:1993-04-01 Issue:2 Volume:176 Page:335-345
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Das N. R.,Chakravarti A. N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Electronic properties of two-dimensional systems

2. Effect of size quantization on the Einstein relation in ultrathin films of non-parabolic semiconductors

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1. The Heisenberg’s Uncertainty Principle (HUP) and the Electron Statistics (ES) in Heavily Doped (HD) Kane-type III-V and Opto-Electronic Materials in the Presence of Intense Radiation;Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures;2022

2. 1. Heisenberg’s uncertainty principle (HUP) and the carrier contribution to the elastic constants in heavily doped (HD) optoelectronic nanomaterials in the presence of intense light waves;Nanomaterials;2018-11-05

3. Einstein and His Photoemission from Heavily Doped Quantum Wells;Reviews in Theoretical Science;2016-03-01

4. Einstein’s Photoemission from Quantum Confined Superlattices;Journal of Nanoscience and Nanotechnology;2016-01-01

5. Few Related Applications;Springer Tracts in Modern Physics;2015-10-27

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