Non-Adiabatie Calculation of the Binding Energy of the Exeiton–Neutral Donor Complex in Semiconductors
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
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1. Growth of CuInS2 crystals from melt and their properties;physica status solidi (c);2006-09
2. Binding energy of exciton-impurity complexes in semiconductors with diamond and zinc blende structure;Semiconductors;1998-05
3. Fourier-transform magnetophotoluminescence spectroscopy of donor-bound excitons in GaAs;Physical Review B;1994-06-15
4. Monotonicity and concavity in Coulomb systems;Few-Body Systems;1987
5. Radiative decay of the bound exciton in direct-gap semiconductors: The correlation effect;Physical Review B;1983-11-15
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