Tight-Binding Cluster Model for C, Si, and Ge. II. Size and Shape Dependence of Some Cluster Properties-Reference-Cited by-同舟云学术

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Tight-Binding Cluster Model for C, Si, and Ge. II. Size and Shape Dependence of Some Cluster Properties

Published:1983-07-01 Issue:1 Volume:118 Page:173-178
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Künne L.,Skála L.,Bílek O.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Tight-Binding Cluster Model for C, Si, and Ge. I. Analytic Solution for s-States in Diamond Lattice

2. Tight-binding calculations of the valence bands of diamond and zincblende crystals

3. Maximum differences of electron density of states of finite and infinite crystals

4. From Small to Infinite F.C.C. Clusters

5. From finite to infinite crystals: Some electronic properties of BCC clusters

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