Shift of the Fundamental Absorption Edge of TlSe Under Hydrostatic Pressure-Reference-Cited by-同舟云学术

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Shift of the Fundamental Absorption Edge of TlSe Under Hydrostatic Pressure

Published:1982-10-01 Issue:2 Volume:113 Page:K127-K129
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Allakhverdiev K. R.,Gasymov Sh. G.,Mamedov T. G.,Salaev E. Yu.,Efendieva I. K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Effect of Pressure and Temperature on the Band Structure of TlSe

2. , , , and , Proc. Internat. Conf. Lattice Dynamics, Flammarion, Paris 1977 (p. 95).

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic properties and phase transitions in low-dimensional semiconductors;Journal of Physics: Condensed Matter;2008-07-01

2. Influence of Pressure on the Physical Properties of Chain TISe-type Crystals;Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials;2001

3. On the preparation and electrical properties of thallium selenide monocrystals;Crystal Research and Technology;1989-03

4. Band Gap Variation in Mixed Crystals with TlSe-Type Crystal Structure;physica status solidi (b);1988-05-01

5. The Influence of Hydrostatic Pressure on the Fundamental Absorption Edge of Crystals with TlSe-Type Structure;physica status solidi (b);1984-12-01

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