On the static conductivity of a heavily doped semiconductor-Reference-Cited by-同舟云学术

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On the static conductivity of a heavily doped semiconductor

Published:1979-04-01 Issue:2 Volume:92 Page:579-583
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Arbuzov Yu. D.,Evdokimov V. M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. in: Solid State Physics, Inst. of Scientific Information, Academy of Sciences, Moscow 1965.

2. in: Statistical Physics and the Quantum Field Theory, Science, Moscow 1973.

3. , and , Methods of Quantum Field Theory in Statistical Physics, Fizmatgiz, Moscow 1962.

4. Theory of Impurity Resistance in Metals

5. A new method for the evaluation of electric conductivity in metals

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An improved ionized‐impurity scattering model for Monte Carlo simulations;Journal of Applied Physics;1991-08

2. Ionized-impurity scattering in the strong-screening limit;Physical Review B;1987-10-15

3. Electron mobility in heavily doped and compensated gallium arsenide due to scattering by potential fluctuations;Journal of Physics C: Solid State Physics;1985-05-20

4. Ionized-impurity scattering in the weak-screening limit;Physical Review B;1985-02-15

5. Mobility of holes in p-type silicon determined by the self-consistent method;Solid-State Electronics;1984-07

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