Vibrational and Electronic Structure of Hydrogen-Related Defects in Silicon Calculated by the Extended Hückel Theory-Reference-Cited by-同舟云学术

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Vibrational and Electronic Structure of Hydrogen-Related Defects in Silicon Calculated by the Extended Hückel Theory

Published:1977-06-01 Issue:2 Volume:81 Page:637-646
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Singh Vijay A.,Weigel C.,Corbett J. W.,Roth L. M.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Bonding and thermal stability of implanted hydrogen in silicon

2. , , , and , to be published.

3. An Extended Hückel Theory. I. Hydrocarbons

4. Molecular-Orbital Treatment for Deep Levels in Semiconductors: Substitutional Nitrogen and the Lattice Vacancy in Diamond

5. Application of extended Hueckel theory to the calculation of the potential energy curve of diatomic copper

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1. Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements;Reports on Progress in Physics;2009-10-15

2. Selected High-Impact Journal Articles on Defects in Microelectronic Materials and Devices;Defects in Microelectronic Materials and Devices;2008-11-19

3. Defects in semiconductor nanostructures;Pramana;2008-02

4. Helium-like donors in semiconductor quantum dots;Journal of Physics: Condensed Matter;2004-03-01

5. The band gap in silicon nanocrystallites;Journal of Physics: Condensed Matter;2002-06-21

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