Low-Temperature Magnetoresistance in Medium-Angle Grain Boundaries in Germanium-Reference-Cited by-同舟云学术

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Low-Temperature Magnetoresistance in Medium-Angle Grain Boundaries in Germanium

Published:1987-12-01 Issue:2 Volume:144 Page:601-608
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Xia Yi-Ben,Bangert E.,Landwehr G.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Defect Electronics in Semiconductors, Wiley/Interscience, 1971.

2. and , Proc. 18th Internat. Conf. Physics of Semiconductors, Ed. O. Engstroem, 1986 (p. 825).

3. Galvanomagnetic properties of grain boundaries in germanium bicrystals from 1.25 to 240°K∗

4. Transport along grain boundaries in germanium bicrystals at low temperatures

5. Electronic Properties of Doped Semiconductors

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HOPPING MAGNETOTRANSPORT IN THE δ-DOPING LAYER;International Journal of Modern Physics B;1994-03-30

2. Electronic states and magnetotransport in δ-layer systems;Physica B: Condensed Matter;1993-02

3. Two-Dimensional Transport Properties of Germanium Bicrystal at Low Temperature;Chinese Physics Letters;1992-07

4. Mechanisms of magnetoresistance in variable-range-hopping transport for two-dimensional electron systems;Physical Review B;1992-03-15

5. Electronic Transport in Regular Doping Structures;Springer Series in Solid-State Sciences;1992

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