Photoinduced Recharging Phenomena and Vanadium-Related Centres in GaAs:V
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. The acceptor level of vanadium in III–V compounds
2. Optical and Electrical Properties of Vanadium-Doped GaAs
3. Identification of a vanadium‐related level in liquid encapsulated Czochralski‐grown GaAs
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1. Site symmetries of vanadium ions in La3Ga5.5Ta0.5O14single crystals;physica status solidi (a);2006-12
2. An investigation of the optical spectra and EPR parameters of vanadium in III–V semiconductors (GaAs, GaP, InP);Physica B: Condensed Matter;2000-09
3. Spectroscopy of hydrogen‐related complexes in GaP:Zn;Applied Physics Letters;1994-10-24
4. Studies of a2E ground state V2+ion in GaAs by TD-EPR;Journal of Physics: Condensed Matter;1993-04-19
5. An empirical rule for the energy levels of T2+ ions of transition metals in compounds AIIIBV and AIIBVI;Solid State Communications;1992-06
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