Electroabsorption of TlInS2 Single Crystals-Reference-Cited by-同舟云学术

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Electroabsorption of TlInS2 Single Crystals

Published:1977-05-01 Issue:1 Volume:81 Page:K47-K50
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Guseinov G. D.,Abdullaeva S. G.,Godzhaev E. M.,Mekhtiev A. Sh.,Alieva L. A.,Ismailov M. Z.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. About a Group of Three-Component Compounds being Analogous to Binary Semiconductors of the AIII BVI Type

2. On Some Properties of TlInS2 (Se2, Te2) Single Crystals

3. Constitutional diagram and physical properties of TlSeInSe pseudobinary system

4. Poisk i fizicheskie issledovaniya novykh poluprovodnikovanalogov Baku, 1969 (p. 1–81).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric permittivity and relaxation process investigation of C-doped TlInS2 crystals;Modern Physics Letters B;2021-06-22

2. Electrical and pyroelectric properties of TIInS2;Ferroelectrics;1988-01

3. Special features of exciton absorption spectra of AIIIBIIIX2VI-type layer-semiconductor crystals;physica status solidi (b);1986-01-01

4. Electroabsorption in TlInS2;Solid State Communications;1982-10

5. TlInS(2x)Se(2(1-x)), TlInS(2x)Te(2(1-x)) physical properties;Non-Tetrahedrally Bonded Elements and Binary Compounds I

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